Abstract
High quality TiO2 film grown by MOCVD on p-type GaAs with (NH4)2S treatment was obtained. The characteristics of TiO2/GaAs MOS capacitor were further improved by post-metallization annealing treatment. The leakage current densities can reach 1.7×10−6 and 4.5×10−5A/cm2 at ±2V (2.7MV/cm). The equivalent oxide thickness can reach 0.53nm for the physical thickness of 7.5nm. The dielectric constant is 52. The lowest interface state density is 4.7×1011cm−2eV−1 derived by the high-low frequency capacitance method.
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