Abstract
Ultrafast Laser Lift-Off In article number 2111920, Lingfei Ji and co-workers present a novel one-step laser lift-off (LLO) for an ultra-smooth, low-stress patterned gallium nitride (GaN) film and GaN-based light-emitting diode device without affecting the electroluminescence performance of the low-energy ultrafast laser, showing great promise in industrial fabrication of flexible GaN-based electronics.
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