Abstract
We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD) for silicon carbide (SiC) film formations. We mass-selected SiC2H6+ and SiC3H9+ ions from fragments produced from HMD, and finally produced low-energy SiC2H6+ and SiC3H9+ ion beams. The ion energy was approximately 100 eV. Then, the ion beams were irradiated to Si(100) substrates. The temperature of the Si substrate was 800°C during the ion irradiation. The X-ray diffraction and Raman spectroscopy of the substrates obtained following SiC2H6+ ion irradiation demonstrated the occurrence of 3C-SiC deposition. On the other hand, the film deposited by the irradiation of SiC3H9+ ions included diamond-like carbon in addition to 3C-SiC.
Highlights
Low-energy ion beam deposition is a powerful technique for the formation of films on substrates (e.g., iron[1] and diamond[2] on silicon (Si) substrates)
Using the mass selector and a Faraday cup installed behind the mass selector, we previously analyzed the mass distribution of ions in the ion source,[32] and found that both SiC2H6+ and SiC3H9+ ions existed in the ion source
We obtained low-energy SiC2H6+ and SiC3H9+ ion beams by the mass-selection of the fragment ions produced from HMD in the ion source, and irradiated Si substrates with the SiC2H6+ and SiC3H9+ ions
Summary
Low-energy ion beam deposition is a powerful technique for the formation of films on substrates (e.g., iron[1] and diamond[2] on silicon (Si) substrates). The ions for such film depositions are made from fragments produced through the source material decomposition. It is essential to determine which source materials and which fragments are appropriate for various film deposition processes. We selected a silicon carbide (SiC) film deposition as an experimental model using hexamethyldisilane (HMD, (CH3)3SiSi(CH3)3) as a source material. It has been established that SiC films can be deposited with monomethylsilane (SiH3CH3), dimethylsilane (SiH2(CH3)2), or trimethylsilane (SiH(CH3)3) by various deposition techniques.[5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21] In those studies,[5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21] monomethylsilane, dimethylsilane, or trimethylsilane was selected as a source material because of possessing both Si and C atoms
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