Abstract
The effect of low energy proton irradiation induced damage on the near interface of the Pd/n-GaAs Schottky Barrier Diodes (SBDs) has been studied using I- V and C- V characteristics. The reverse leakage current increases with irradiation fluence. Annealing the irradiated SBDs helps to anneal out the irradiation induced defects. Annealing mechanism of the defects in the irradiated SBDs with different fluences are discussed. The reverse leakage current is more for the CONTROL SBDs annealed at 673 K, which is attributed to the formation of a thin heavily doped GaAs layer at the interface. A decrease in the capacitance has been observed in the irradiated and annealed SBDs for the fluences 1 × 10 14, 1 × 10 15 and 1 × 10 16 p cm −2. For higher incident particle fluences (1 × 10 15 and 1 × 10 16 p cm −2) a slight increase in the capacitance has been observed compared to 1 × 10 14 p cm −2 fluence.
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