Abstract
Photoelectron diffraction pattern from Ga 3d core level photoemission have been recorded for various III–V (110) semiconductor surfaces (GaP, GaAs, GaSb) at low photon energies (40–90 eV) for the first time. The resolved bulk and surface contributions exhibit strong dependence on photon energy and emission direction reflecting the different atomic environment associated with surface and bulk emitters. The observed anisotropies are quite distinct for each compound. They are more pronounced for compounds with constituents of different scattering properties like GaSb and less for those with similar ones like GaAs. The experimental results are compared to calculations within a multiple-scattering cluster model including spherical-wave corrections in order to study the surface relaxation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
