Abstract
The influence of oxygen ion bombardment and oxygen exposure on secondary ion emission of silicon surfaces seems to be the subject most extensively studied in SIMS literature, but only little is known about the kinetics of oxygen uptake and oxygen depth profiles for low energy oblique incidence primary bombardment. In the present paper we give a preliminary account of our combined method investigations of secondary ion emission of silicon under oxygen load.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
