Abstract
This paper presents an experimental methodology for forming silicon dioxide (SiO2) films with an ion beam induced chemical vapor deposition method using tetraethyl orthosilicate (TEOS). In this methodology, both O+ ion beam and TEOS were simultaneously injected onto substrates. The substrate temperature was set at room temperature. The energy of the O+ ion beam was 100 eV. At the completion of the experiments, films were found to be deposited on the substrates. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy of the deposited films showed that SiO2 films were formed on the substrates.
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