Abstract
A radiation detector was fabricated from a commercial silicon photodiode, after removing its transparent cover cap and surface coating. The window thickness of the detector fabricated was evaluated to be 23 μg/cm 2. The area of the depletion region was 13.2 mm 2 and its depth was estimated to be about 100 μm. The energy resolution (FWHM) was 2.0 keV for conversion electrons (62.52 and 84.23 keV) from 109Cd and 1.8 keV for γ-rays (26.34 and 59.54 keV) from 241Am at room temperature. The lowest limit of measurable energy was about 5 keV for photons and 6 keV for electrons.
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