Abstract
We report on N doses and profiles in Si and (ultra)thin SiO 2 films on Si nitrided by plasma or ion beam processing in the 3–1000 eV energy range. Accurate elemental quantification was performed by nuclear reaction analysis (NRA), and elemental profiling with subnanometer depth resolution was achieved by narrow nuclear resonance profiling (NNRP) or medium energy ion scattering (MEIS). Heavy and shallow nitrogen incorporation was observed up to 0.7 N/(N + O) and peak N concentrations at 2 nm and less from the sample surface. Device-quality films were produced with post-nitridation annealing in O 2, as indicated by C– V and I– V measurements.
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