Abstract
A focused ion beam system with a liquid metal ion source has been used to irradiate monocrystalline silicon with various ions (Ga, Si, Au, Au clusters) at energies from 60 keV down to 40 eV. The fluence was between 10 12 and 10 16 atoms/cm 2. A structure size of approximately 20 μm by 20 μm has been chosen to facilitate optical measurements. The reflectivity at 785 nm wavelength and laser induced modulated reflectivity have been used to characterise the optical properties of the samples after irradiation. With the beginning of the amorphisation process at fluences around 10 14 to 10 15 atoms/cm 2 for keV energies, an abrupt increase in reflectivity and modulated reflectivity has been found. Silicon irradiated by silicon ions shows a smaller increase in reflectivity, since there is no enhanced optical absorption due to implantation of metallic ions. Irradiation at energies below 1 keV results in a three orders of magnitude lower defect production in comparison to higher energies. The modulated reflectivity of silicon irradiated with Au clusters at 6 keV/atom shows no dependence on cluster size.
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