Abstract
In this paper we demonstrate how low energy electron microscopy can be used to study in situ, and in real time, the growth of thin films on single-crystal surfaces. By studying the growth of Ge and Ag on both the clean and the Sb-terminated Si(111) surface we show how nucleation, growth, island formation, island shapes, thermal stability and the formation of dislocations in the grown films may be observed. Pre-adsorption of Sb strongly modifies the growth of Ge and Ag films on Si(111), leading to more uniform coverage and smoother films in both cases.
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