Abstract

The detailed examination of electron scattering in solids is of crucial importance for the theory of solid-state physics, as well as for the development and diagnostics of novel materials, particularly those for micro- and nanoelectronics. Among others, an important parameter of electron scattering is the inelastic mean free path (IMFP) of electrons both in bulk materials and in thin films, including 2D crystals. The amount of IMFP data available is still not sufficient, especially for very slow electrons and for 2D crystals. This situation motivated the present study, which summarizes pilot experiments for graphene on a new device intended to acquire electron energy-loss spectra (EELS) for low landing energies. Thanks to its unique properties, such as electrical conductivity and transparency, graphene is an ideal candidate for study at very low energies in the transmission mode of an electron microscope. The EELS are acquired by means of the very low-energy electron microspectroscopy of 2D crystals, using a dedicated ultra-high vacuum scanning low-energy electron microscope equipped with a time-of-flight (ToF) velocity analyzer. In order to verify our pilot results, we also simulate the EELS by means of density functional theory (DFT) and the many-body perturbation theory. Additional DFT calculations, providing both the total density of states and the band structure, illustrate the graphene loss features. We utilize the experimental EELS data to derive IMFP values using the so-called log-ratio method.

Highlights

  • A rather recent trend is to complement the experimental results by theoretical simulations that may provide some insight into and interpretation of the processes that lead to the observed results

  • We studied the infinite free-standing monolayer graphene by means of densityfunctional theory, employing the Quantum Espresso software [52]

  • We present the results acquired by the ToF spectrometer on a com mercially available single layer graphene sample by the Ted Pella company [57] and com pare them with existing literature to illustrate the capabilities of the device

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Summary

Introduction

Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Further technological progress and innovations, e.g., in the field of semi-conductors, is a current challenge for the industry. This motivates the search for novel materials, which in turn makes the requirements for techniques of analysis higher. Layered thin materials, constructed by “stacking” 2D sheets on top of each other, represent a class of promising materials. Detailed knowledge of the interaction of electrons with materials is of prime importance for the development of new materials for next-generation electronic devices

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