Abstract
Ion assisted Cl 2 etching is a common processing step for GaAs(001). In this paper we studied the room temperature interaction between energetic (18–508 eV) Cl + ions and the GaAs(001) surface. Low energy (5 keV) Ne + ion scattering (LEIS) was used to study the GaAs surface stoichiometry as a result of the low energy Cl + bombardments. The reaction between the analysis Ne + beam and the chlorinated surface was also studied. Both of these sets of results are compared with models proposed for the ion assisted Cl 2 reactions on GaAs. The results showed that the Cl + bombardment produced an As-rich surface layer that is covered by approximately a monolayer of Cl. The Ne + beam sputters the Cl and chlorides from the surface. The resulting surface was still As-rich, the degree of enrichment was dependent on both the Cl + dose and energy. An arsenic segregation mechanism, from the bulk to the surface, is proposed to explain the As enrichment. A qualitative model is presented and compared with previous models proposed for ion assisted Cl 2 reactions.
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