Abstract
In this study, authors present some morphological and electrical characterization of polycrystalline SiGe thin films (poly-SiGe) deposited by vertical LPCVD using SiH 4, GeH 4 and H 2 mixture in different deposition parameters aiming for MOS gate electrodes. The obtained thin films are very uniform and smooth, with small grain size, feasible to deep submicrom fabrication. The SiGe samples presented resistivity values as low as 0.42 mΩ cm, one order of magnitude lower than poly-Si reference samples. CV and IV measurements points this poly-SiGe as a suitable material for MOS gate electrodes.
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