Abstract
ABSTRACTWe investigate the electrical properties and the OLED application of controlledly doped amorphous hole transporters. Thin films of starburst amine, 4,4',4“-tris(N,N-diphenyl- amino) triphenylamine (TDATA), doped by a fully fluorinated form of tetracyano- quinodimethane (F4-TCNQ), are characterized in situ by temperature dependent conductivity and Seebeck measurements. The conductivity and hole concentration increase with dopant concentration and are many orders of magnitude higher than those of undoped material. OLED devices with the layer sequence ITO/TDATA(200 nm)/Alq3(65 nm)/LiF(1 nm)/Al were fabricated. The use of p-doped TDATA thin films with high bulk conductivity and hole concentration reduces the resistance of the devices and leads to a thinner space charge layer which facilitates injection of holes from the ITO anode.
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