Abstract
An optical phase modulator based on novel n-i-n InGaAlAs/InAlAs multiple-quantum-barrier (MQBs) is proposed to reduce the waveguide loss and enhance the modulation efficiency. Efficient bias loading with low leakage current is realized by taking advantages of the large conduction band discontinuity in InGaAlAs/InAlAs heterostructure and high electron reflection by MQBs. Low optical transmission loss of 2.3 dB/cm and improved modulation performance with a voltage length product of 1.06 V⋅cm are demonstrated for TE mode at 1550 nm. The linear and quadratic electro-optic coefficients of the fabricated device are estimated to be 1.0 pm/V and 1.4 × 10⁻¹⁹ m²/V², respectively.
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