Abstract
We obtained high n-type conductivity and low donor ionization energy for an AlN film grown on SiC by Si ion implantation. The room temperature conductivity reaches 0.26 Ω−1 cm−1, and the donor ionization energy is only 112 meV, which is the best result of Si-implanted heteroepitaxial AlN. The lattice damage caused by ion implantation can be almost completely repaired by annealing at 1330 °C for 2 h. X-ray photoelectron spectroscopy (XPS) results show few O impurity in the sample. The low donor ionization energy is attributed to avoiding the introduction of O impurities and the mitigation of self-compensating effect. These results show the great potential of Si-implanted heteroepitaxial AlN for device applications.
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