Abstract
AbstractSince a GaAs varacter diode has higher Q than a Si diode, it has been widely used for microwaves. This diode must have a hyper‐abrupt junction so as to cover a wide frequency band. However, there are technical limitations in the case of GaAs and up to the present it is realized by the double epitaxial growth method. It has been clear from measurement that diodes fabricated by the double epi‐method gives rise to large nonlinearity of capacitance with respect to voltage, which causes waveform distortion and cross‐modulation. In this paper the low‐distortion feature of a GaAs hyper‐abrupt junction diode using the novel multiple Siion implantation technique will be presented. A detailed device design for low distortion as well as the fabricated diode characteristics will be given.
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