Low-distortion CMOS complementary class E RF tuned power amplifiers

Abstract

A low distortion tuned power amplifier which is suitable for integrated circuit implementation is proposed. The amplifier is a complementary class-E tuned power amplifier because of both P-type and N-type transistors are employed to achieve a highly symmetrical topology, thereby reducing the significant distortion in the output signal of the conventional single-ended class-E power amplifier. In this paper, a complementary class-E power amplifier is presented together with HSPICE simulation results.