Low‐Dimensional Nanostructures for Optoelectronic Applications

Abstract

In recent years, low-dimensional (zero-, one-, and twodimensional) nanostructures have attracted wide attention and become a focus of scientific research and engineering application. This is due to their novel physical and chemical properties caused by size and quantum effects, as well as potential applications in various kinds of devices, for example, optoelectronics, nanoelectronics, and so forth. This special issue is intended to bring the most recent advances in the field of low-dimensional nanostructures for optoelectronic applications. As expected, the research articles in this special issue cover a wide range of topics in this research field, ranging from theoretical simulation to material synthesis, to material characterization, to device fabrication, and to device characterization. In the paper “The formation site of noninterfacial misfit dislocations in InAs/GaAs quantum dots,” S. Zhou et al. simulate the preferential formation site of noninterfacial 60 mixed dislocations in InAs/GaAs quantum dots and find that the positions near the right edge of the quantum dot are the energetically favourable areas for these dislocations. In the paper “Thickness-dependent strain effect on the deformation of the graphene-encapsulated Au nanoparticles,” S. Ye et al. simulate the effect of strain on the morphology of graphene-encapsulated Au nanoparticles. The modelling results indicate that strain and deformation can be designed by the graphene layer thickness, providing an opportunity to engineer the structure and morphology of the grapheneencapsulated nanoparticles. In the paper “Strain distribution of Au and Ag nanoparticles embedded in Al2O3 thin film,” H. Huang et al. calculate the strain distribution in Au and Ag nanoparticles embedded in amorphous Al