Low dimensional carrier confinement structure grown on patterned GaAs(111)A substrates by molecular beam epitaxy

Abstract

Low-dimensional carrier confinement structures have been grown on patterned GaAs(111)A substrates with (311)A sidewalls by a single-step molecular beam epitaxy growth of a Si-doped GaAs layer. The method is based on the amphoteric nature of Si dopants in GaAs growth; the confined (111)A region is p-type and the (311) sidewalls are n-type. The confinement structures are confirmed by observing their cathodoluminescence spectra. The reduced confinement structure is confirmed by current–voltage measurements with an atomic force microscope.