Abstract
We investigated the charge trapping property of SiOx-SiCN-SiO2 stacked films formed on silicon substrates. The stacked films captured charges and the trapped charge density was found to be roughly equal to that in a conventional SiOx-SiNX-SiO2 stacked film. On the other hand, the flat-band voltage shift induced by the trapped charge in the metal-SiOx-SiCN-SiO2-silicon capacitor was greater than that in the metal-SiOx-SiNX-SiO2-silicon capacitor. The larger flat-band voltage shift is attributed to the lower dielectric constant of SiCN film. The programming and erasing characteristics of metal-SiOx-SiCN-SiO2-silicon structures were also investigated.
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