Abstract
A new method of the growth of low-density GaN quantum dots on AlGaN by MOVPE is reported. The method bases on in-situ etching of the AlGaN surface in the presence of silane (SiH4) and subsequent growth of randomly nucleated GaN nano-crystallites. Investigation of successive growth stages with atomic force microscopy (AFM) shows that density of the GaN crystallites is of the order of 108 cm–2. Micro-photoluminescence (µPL) measurements show sharp emission lines originating from single quantum dots without any artificial masks or mesa structures. This gave unique possibility for advanced studies on optical and electrical properties of single GaN quantum dots in AlGaN. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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