Abstract
Cryogenically cooled HgCdTe (MCT) quantum detectors are unequalled for applications requiring high imaging as well as high radiometric performance in the infrared spectral range. Compared with other technologies, they provide several advantages, such as the highest quantum efficiency, lower power dissipation compared to photoconductive devices, and fast response times, hence outperforming micro-bolometer arrays. AIM will present its latest results on n-on-p as well as p-on-n low dark current planar MCT photodiode focal plane detector arrays at cut-off wavelengths >11 μm at 80 K. Dark current densities below the Rule’07 have been demonstrated for n-on-p devices. Slightly higher dark current densities and excellent cosmetics with very low cluster and point defect densities have been demonstrated for p-on-n devices.
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