Abstract
Preliminary measurements of the photoresponse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice are presented. Very low reverse-bias dark currents (<6×10?8 A/cm2 at 3 V) are measured, while still retaining the speed and spectral response of a conventional GaAs PIN diode. The ?3 dB bandwidth is found to be greater than 1 GHz, and the responsivity is 0.1 A/W.
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