Abstract
Here we report designs for performance improvements of homojunction interfacial workfunction internal photoemission (HIWIP) detectors for different far infrared regions. A design is given to reduce dark current to about 10 e /s for a 300 μm cut-off detector at 1.3 K, at a bias field of 500 V/cm by adjusting the thickness of the intrinsic layer to eliminate tunneling component. The intrinsic region thickness and the bottom contact are used to obtain an optical cavity effect thus increasing the absorption to almost 100%. Increased responsivity due to the optical cavity effect is experimentally verified by using three detector structures, with three different cavity structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
