Low cycles pulsed chemical vapor deposition of polycrystalline anatase TiO2

Abstract

In this work, an atomic layer deposition (ALD) system is used to identify deposition conditions resulting in anisotropic growth and the formation of highly defined polycrystalline anatase titanium dioxide. FESEM, Raman Spectroscopy, and XRD were extensively used to characterize the deposited titania. The ALD parameter refinement resulted in the attainment of a polycrystalline anatase phase titania in as low as 30 cycles, although the final parameter resulted in a pulsed-chemical vapor deposition (pulsed-CVD). This work suggests that the anatase crystal phase’s development is more dependent on deposition process parameters such as precursor pulse, waiting time, and vacuum times than on the number of cycles. Moreover, the developed pulsed-CVD procedure to deposit anatase titania was capable of coating rough aluminum and titanium substrates with polycrystalline anatase titania, highly increasing the potential to be used in other biomedical implants made of different metals such as stainless steel or in other applications such as dielectrics