Abstract
Low-cost PIN silicon photodiodes with an active area of 1 cm2 or more have become readily available in recent years. Devices fabricated on 300 mu m, high-resistivity silicon can have a junction capacitance of the order of 50 pF. Used with very low noise preamplifiers they can replace photomultipliers in some applications. The noise performance of two commonly available photodiodes connected to a low-noise, hybrid preamplifier, developed for a large CERN experiment, has been investigated by using the devices as direct x-ray detectors. The energy resolution which is dominated by the system noise varies from 10% at 60 keV to 4% at 120 keV, equivalent to a noise charge at the preamplifier input of approximately 680 e- RMS.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
