Abstract
Abstract Rear side floating junction solar cells with localised contacts often show parasitic shunting losses. For p-type material, this is due to tunnelling that takes places between the passivating n + -type rear junction and the p + -type back surface field region underneath localised rear contacts. To avoid this, the rear metallisation and the passivation layer should electronically be separated. Alternatively, the (induced) doping concentration of these layers could be optimised. This paper discusses the constraints met upon incorporation of such lowly recombinative structures into a low-cost solar cell process on multi-crystalline Si (mc-Si) material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
