Low-cost fabrication of submicron all polymer field effect transistors

Abstract

All polymer field effect transistors have been fabricated combining nanoimprint lithography and inkjet printing. Trenches with hydrophilic bottoms confined by hydrophobic walls with considerable height are patterned by nanoimprint lithography. Conducting polymer solutions were then delivered into these trench liquid containers by inkjet printing. Dried conducting polymer in nearby trenches forms source-drain electrodes with the channel length accurately defined by the gap in between the designed two trenches. Top-gate all polymer field effect transistors with submicron channel lengths were successfully realized by such low-cost process.