Abstract
A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.
Highlights
Nonvolatile resistive switching memory devices containing nanoparticles (NPs) have emerged as promising next-generation electronic candidates due to their unique potential advantages of good scalability, low-power operation and large capacity for data storage.[1,2,3,4,5] despite their good retention and endurance properties, two problems need to be resolved before taking into consideration device applications
The naturally formed thin alumina layer on the Al electrode is used as interfacial layer, and a monolayer of Ag NPs is embedded between the interfacial alumina layer and the top Cu electrode
115010-6 Xia et al To demonstrate the key roles of alumina layer and Ag NPs layer in switching performance, comparative experiments are carried out and all devices are measured upon forward voltage: First, Cu/Alumina/Al devices was fabricated without Ag NPs, the ON/OFF ratios were only about 103, demonstrating the introduction of Ag NPs monolayer greatly improves ON/OFF ratios by four orders of magnitude
Summary
Nonvolatile resistive switching memory devices containing nanoparticles (NPs) have emerged as promising next-generation electronic candidates due to their unique potential advantages of good scalability, low-power operation and large capacity for data storage.[1,2,3,4,5] despite their good retention and endurance properties, two problems need to be resolved before taking into consideration device applications. One of the issues is to develop a reliable and compatible process for facile and low-cost fabrication,[1] the other is about improving memory switching parameters.[6]. Whether or not such an interfacial layer play key roles in developing low-cost fabrication process and in improving memory switching parameters. The enhancement of switching parameters by metal NPs has been demonstrated,[10,11,12] the preparation of uniform NPs layers is far from practical. The naturally formed thin alumina layer on the Al electrode is used as interfacial layer, and a monolayer of Ag NPs is embedded between the interfacial alumina layer and the top Cu electrode We further demonstrate such a Cu/Ag NPs/Alumina/Al configuration exhibit excellent switching performance and unusual polar-dependent behavior
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