Low conversion loss and high LO-RF isolation 94-GHz active down converter

Abstract

We report a low conversion loss and high local oscillator (LO)-to-RF isolation 94-GHz monolithic-microwave integrated-circuit (MMIC) active down converter using 0.1-/spl mu/m InGaAs/InAlAs/GaAs metamorphic high electron-mobility transistor (MHEMT). The fabricated MMIC active down converter employs a one-stage MHEMT amplifier in the RF port of the active down converter, thereby amplifying the RF signal and improving the LO-to-RF isolation by using an inherent S/sub 12/ isolation characteristic. The fabricated MMIC active down converter shows an excellent conversion loss of 6.7 dB at an LO power of 10 dBm and high LO-to-RF isolations of 21 /spl plusmn/ 0.5 dB in a frequency range from 93.7 to 94.3 GHz. High dc and RF performances of the MHEMT used for the active down converter are due to the optimized epitaxial and device structure, and a maximum transconductance of 760 mS/mm, a current gain cutoff frequency of 195 GHz, and a maximum oscillation frequency of 391 GHz were measured. A active down-converter module is assembled by mounting the active down-converter chip on a jig with low-loss transition structure between the coplanar waveguide and waveguide. The fabricated active down-converter module shows a good conversion loss of 10.9 dB and a very high LO-to-RF isolation of 27.5 dB at 94.03 GHz.