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Abstract
Combined with Ti/TiN/Al for ultra-thin NiSi2 and in situ-doped Si:P, an ultra-low contact resistivity of 4.6 × 10−9 Ω cm2 was achieved under a low thermal budget (⩽450 °C). The in situ-doped Si:P layer was grown by molecular beam epitaxy at 350 °C with a high doping concentration of 1.2 × 1021 cm−3 exceeding the solid solubility. On the Si:P substrate, ultra-thin NiSi2 film of 12.8 nm was formed by low-temperature drive-in diffusion and alloying at 180 °C and 450 °C, respectively. The Ti/TiN/Al-NiSi2-Si:P scheme provides a solution to the dilemma between performance boosting and reliability degradation in advanced very-large-scale integration manufacturing technology. It can also be applied in future monolithic three-dimensional integration.
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