Abstract
Forming low-resistivity contacts on cuprous oxide (Cu2O) is an essential step toward demonstrating its suitability as a candidate solar cell material. We measure the contact resistivity of three noble metals (Au, Ag, and Pd) on sputtered Cu2O thin-films with a range of nitrogen doping levels. Using the circular transmission line model, specific contact resistivity as low as 1.1 × 10−4 Ω · cm2 is measured for Pd contacts on heavily doped Cu2O films. Temperature-dependent current-voltage measurements and X-ray photoemission spectroscopy are used to determine the barrier heights formed at metal/Cu2O interfaces. Thermionic emission is observed to dominate for undoped films, whilst field emission dominates for heavily doped films, highlighting the importance of carrier concentration on contact resistivity. Finally, we demonstrate that low contact resistivity can be achieved on heavily doped Cu2O films using Earth-abundant metals, such as Cu and Ni.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
