Abstract
A systematic investigation of the NiGeSn formation and its contact resistivity with GeSn semiconductors are studied. The method of investigation is based on the circular transmission line measurement (CTLM) geometry. The optimum NiGeSn formation temperature is 325 °C, offering a lower contact resistivity of 4.15 × 10−5 Ω·cm2 on n-GeSn. The elemental diffusion mechanism during the NiGeSn formation is also discussed. In line with the research of new materials for cryogenic electronics, GeSn shows a low contact resistivity of 1.79 × 10−5 Ω·cm2 at 5 K. These findings offer valuable insights into optimizing GeSn-based contact technologies for both low-power and cryogenic applications.
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