Abstract
Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10−8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal–oxide–semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.
Highlights
Owing to its superior hole mobility, n-germanium (n-Ge) is considered to be promising as a channel material and p+ doped germanium is used as source/drain for Ge p-type metal–oxide
Superior mobility leads to large saturated drain current, high cutoff frequency, and large transconductance; the development of the Ge MOSFET technology still faces a variety of challenges, including large contact resistance within the p-type source/drain (S/D) region.[1,2]
Besides some ultralow specific contact resistivity values of Nickel germanide (NiGe) to p-Ge obtained by special calibrations,[5,8] the reported specific contact resistivity ρc values are near or a little below 1 × 10−7 Ωcm[2], which is far from meeting the demands of high-performance MOSFETs.[5]
Summary
Owing to its superior hole mobility, n-germanium (n-Ge) is considered to be promising as a channel material and p+ doped germanium is used as source/drain for Ge p-type metal–oxide–.
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