Abstract
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.
Highlights
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology
In this study we investigate contact resistance in epitaxial graphene Hall bar devices for applications in quantum resistance metrology
Despite the relatively small metal-graphene contact geometry when compared to contacts summarized in Figure 2(c), all eight contact resistances obtained from three-terminal measurements for the device are below 10 Ω, suitable for applications in quantum resistance metrology
Summary
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Low contact resistance in epitaxial graphene devices for quantum metrology
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