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Abstract
The possibility of a controlled decrease in the effective height of the Schottky (Mott) barrier to the AlGaN/GaN (Ga-face polarity) heterostructure due to the modification of the shape of the barrier by the electric field of the polarization charge arising in the plane of the heterojunction because of the jump in electric polarization is experimentally shown. A decrease in the effective barrier height is related to an increase in the role of electron tunneling through the barrier. The effective barrier height can be controlled by varying the thickness and chemical composition of the AlGaN layer and choosing the metal of the barrier contact. Test low-barrier Mott Ti/AlGaN/GaN diodes demonstrating high values of the ampere-watt sensitivity (9 A/W) for a low specific differential resistance (4 × 10–4 Ω⋅cm2) at zero bias have been manufactured.
Published Version
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