Abstract

AbstractAIN buffer and GaN layers grown on (0001) sapphire substrate by molecular beam epitaxy have been analysed by high resolution electron microscopy. They are found to be made of mosaic grains rotated around the c-axis by angles in the range of 0-20°. According to the value of the rotation angle, these boundaries can be classified as low-angle and high-angle grain boundaries. Some of these high-angle grain boundaries correspond to special misorientations which can be described in terms of coincidence site lattice. For one of these grains, the rotated angle is equal to 18.94° that is very close to the coincidence orientation, sigma = 31 with a rotation angle equal to 17.89°. This leads to a new epitaxial relationship (0001)sap// (0001)AIN and [1120]sap//[2130]AIN.

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