Abstract
The major cause of IGBT devices failure is heat. There is a need of higher power densities and decreased packaging solutions in the industries commercial applications. In order to meet the through-life reliability targets for power modules, it is critical to understand the response of typical wear- out mechanisms, for example wire-bond lifting and solder degradation So the concentration is on the tools that need to take into account detailed device structures and different physical phenomena / parameters that take place inside the semiconductor structure during operation and also to present the effect of power cycling frequency, load current and mean temperature on temperature variations within the power module structure and its impact on the life consumption for two common wear-out mechanisms (the bond wire and the substrate-solder). It is shown that bond wire degradation is the dominant failure mechanism for all power cycling conditions whereas substrate solder failure dominates for externally applied (ambient or passive) thermal cycling.
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