Abstract
Solid-state devices used for quantum computation and quantum sensing applications are adversely affected by loss and noise caused by spurious, charged two-level systems (TLS) and stray paramagnetic spins. These two sources of noise are interconnected, exacerbating the impact on circuit performance. We use an on-chip electron spin resonance (ESR) technique, with niobium nitride (NbN) superconducting resonators, to study surface spins on silicon and the effect of postfabrication surface treatments. We identify two distinct spin species that are characterized by different spin-relaxation times and respond selectively to various surface treatments (annealing and hydrofluoric acid). Only one of the two spin species has a significant impact on the TLS-limited resonator quality factor at low-power (near-single-photon) excitation. We observe a three- to fivefold reduction in the total density of spins after surface treatments and demonstrate the efficacy of ESR spectroscopy in developing strategies to mitigate loss and decoherence in quantum systems. Published by the American Physical Society 2024
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
