Abstract
The objective of this paper is to design, analyze and compare the characteristics of two full-bridge LLC converters. Two different convertors are designed with silicon (Si) MOSFETs and Silicon carbide (SiC) MOSFETs. The study comprises of mathematical modeling and simulations of the two converters. A comparative analysis of power losses for a 3kW prototype of a full-bridge LLC resonant converter with a wide range of input voltage is elaborated in detail. The efficiency of the two MOSFETs is studied under a wide range of input voltages and loads. The conduction and switching losses are analyzed for different loads. Silicon carbide SiC-MOSFET has an advantage over Si MOSFET due to its overall performance. But still, due to low cost, the Si-MOSFET can be preferred.
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