Abstract
This paper presents a Lorentz force magnetometer employing a micromechanical oscillator. The oscillator, actuated by both electrostatic force and Lorentz force, is based on a 370 μm by 230 μm silicon micromechanical resonator with quality factor (Q) of 13 000. This field-sensitive micromechanical oscillator eliminates the need for an external electronic oscillator and improves magnetometer's stability over temperature. The resonator uses no magnetic materials and is encapsulated using an epitaxial polysilicon layer in a process that is fully compatible with complementary metal-oxide-semiconductor manufacturing. The sensor has a magnetic field resolution of 128 nT/rt-Hz with 2.1 mA bias current.
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