Abstract
1.3- and 1.55- $mu$ m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs–InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 $mu$ m) and 2.0 (for 1.55 $mu$ m) mW single mode power at 25 $^circ$ C, 0.6 mW single mode power at 85 $^circ$ C and lasing operation at $≫hbox100^circ$ C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3- $mu$ m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55- $mu$ m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.
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