Abstract
We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (001) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8μm at 77K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.
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