Long-wavelength GaInAs/GaAs VCSELs and multiwavelength arrays

Abstract

We have developed highly strained GaInAs/GaAs quantum well (QW) vertical cavity surface emitting lasers (VCSELs) emitting at 1.1 - 1.2 μm wavelength band. Excellent temperature characteritsics, enabling uncooled operations, have been realized. We successfully extended the emission wavelength of highly strained GaInAs QWs up to 1.2 mm without degradations of crystal qualities. We demonstrated uncooled low threshold current operations and high speed operations up to 10 Gb/s. We realized error-free data transmission in a standard single-mode fiber using a GaInAs single-mode VCSEL. For further upgrade of high speed LANs, we carried out the growth of highly strained GaInAs/GaAs quantum wells on a patterned substrate for realizing multiple wavelength VCSEL arrays in a wide wavelength span. We demonstrated a single-mode multiple-wavelength VCSEL array on a patterned GaAs substrate covering a new wavelength window of 1.1 - 1.2 μm. By optimizing a pattern shape, we achieved multiple-wavelength operation with widely and precisely controlled lasing wavelengths. The maximum lasing span is as large as 190 nm. The multiple-wavelength array and wavelength engineering of VCSELs may open up future ultra-high capacity short reach systems.