Abstract
The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs substrates were studied. The GaAsN layers containing InGaAsN quantum wells with a high (exceeding 1%) nitrogen concentration were obtained. The long-wavelength emission in the InGaAsN quantum wells is obtained in the wavelength range up to 1.32 μm at room temperature. The effect of the InGaAsN quantum parameters on the optical properties of heterostructures is studied.
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