Abstract
This paper presents the results of a study of long-time relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP) crystals irradiated by 50 MeV electrons. A manifold increase in photosensitivity and quenching of residual conductivity was found as a result of irradiation. It is shown that LR in GaP is due to disordered regions (generated by electron irradiation) which have conductivity close to self one. The Fermi level in the disordered regions is determined by which is located deep in the forbidden band (Ее - 1.0 eV). LR effect is mainly explained by a spatial separation of electrons and holes, recombination of which is prevented by potential barriers. The observed increase in conductivity is associated with the increase in the concentration of minority carriers as well as with increase of the Hall mobility at the sample illumination.
Highlights
There are a lot of publications on anomalously large relaxation time of photoexcited carriers in a variety of materials, especially in semiconductors
There are two models to explain the phenomenon of long-time relaxation (LR) and residual conductivity (RC) in inhomogeneous materials
K and 80 K for n-gallium phosphide (GaP) crystal irradiated by 50 MeV electrons at a dose of 2·1016 e/cm2
Summary
There are a lot of publications on anomalously large relaxation time of photoexcited carriers in a variety of materials, especially in semiconductors. One of them is based on the idea of capturing non-equilibrium carriers by strongly localized states in the vicinity of point defects or impurities with deep energy levels. Another is a barrier model, which includes spatial heterogeneities in the vicinity of clusters, the defects generated by irradiation with heavy ions, neutrons or fast electrons. This article presents some results on the increase of photosensitivity of GaP samples irradiated by highenergy electrons as well as an analysis of the experimental data obtained when investigating photoconductivity and RC after turning of photoionization
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