Abstract
A technology has been developed for fabricating high-stability photoresistors for the 8–12-μm spectral range from heteroepitaxial structures composed of a solid solution of CdHgTe, obtained by molecular-beam epitaxy on a gallium arsenide substrate. The stability of the photoelectric parameters of multielement photoresistors has been investigated by prolonged heating at elevated temperatures (65–85°C). The photoresistors had a detectivity limited by background-radiation noise. It is shown that the main cause of degradation of the photoresistor’s photosensitive element is the diffusion of mercury vacancies from the front to the side surfaces. Eliminating the causes of the appearance of vacancies and creating protective coatings on the surfaces makes it possible to stabilize the photoresistors for 2500h at 70°C.
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