Abstract
Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structure in Cd x Zn 1− x Te epitaxial layers grown on (0 0 1)GaAs substrates. The SADP showed two sets of superstructure reflections with symmetrical intensity, and the high-resolution TEM (HRTEM) image showed doublet periodicity in the contrast of the (1 1 1) lattice planes. The results of the SADP and HRTEM measurements showed that CuPt-type ordered structures with two different variants were observed in the Cd x Zn 1− x Te epitaxial layers. The formation of a CuPt-type ordered structure in the Cd x Zn 1− x Te epitaxial layer might originate from the minimization of strain relaxation energy in the reconstructed GaAs(0 0 1) surface. A possible atomic crystal structure for the Cd x Zn 1− x Te epitaxial layer is presented based on the HRTEM results. These results provide important information on the microstructural properties for enhancing device efficiencies of operating at the blue–green region of the spectrum.
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